GAN039-650NBB - nexperia

GAN039-650NBB Gallium Nitride (GaN) FET

The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2. Features and benefits • Simplified driver design as standard level MOSFET gate dr.

Features

• Simplified driver design as standard level MOSFET gate drivers can be used:
• 0 V to 12 V drive voltage
• Gate threshold voltage VGSth of 4 V
• Robust gate oxide with ±20 V VGS rating
• High gate threshold voltage of 4 V for gate bounce immunity
• Low body diode Vf for reduced losses and simplified dead-time adjustments
• Transient over-voltage capability for increased robustness
• CCPAK package technology:
• Improved reliability, with reduced Rth(j-mb) for optimal cooling
• Lower inductances for lower switching losses and EMI
• 150 °C maximum junction temperature
• High Board Level Reliabil.