GANB4R8-040CBA - nexperia

GANB4R8-040CBA Gallium Nitride (GaN) FET

The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off emode device offering superior performance. 2. Features and benefits • Enhancement mode - normally-off power switch • Bi-directional device • Ultra high switching speed capability.

Features

• Enhancement mode - normally-off power switch
• Bi-directional device
• Ultra high switching speed capability
• Ultra-low on-state resistance
• RoHS, Pb-free, REACH-compliant
• High efficiency and high power density
• Wafer Level Chip-Scale Package (WLCSP) 2.1 mm x 2.1 mm 3. Applications
• High-side load switch
• OVP protection in smart phone USB port
• Power switch circuits
• Stand-by power system 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDD drain-drain voltage -40 °C ≤ Tj ≤ 125 °C [1] - - 40 V ID drain current VGD =.