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GAN039-650NBB |
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| Part Number | GAN039-650NBB |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage si... |
| Features |
• Simplified driver design as standard level MOSFET gate drivers can be used: • 0 V to 12 V drive voltage • Gate threshold voltage VGSth of 4 V • Robust gate oxide with ±20 V VGS rating • High gate threshold voltage of 4 V for gate bounce immunity • Low body diode Vf for reduced losses and simplified dead-time adjustments • Transient over-voltage capability for increased robustness • CCPAK package technology: • Improved reliability, with reduced Rth(j-mb) for optimal cooling • Lower inductances for lower switching losses and EMI • 150 °C maximum junction temperature • High Board Level Reliabil... |
| Document |
 GAN039-650NBB Data Sheet
PDF 521.26KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GAN039-650NBBA |
nexperia |
GaN FET |
|
| 2 | GAN039-650NTB |
nexperia |
Gallium Nitride (GaN) FET |
|
| 3 | GAN041-650WSB |
nexperia |
GaN FET |
|
| 4 | GAN063-650WSA |
nexperia |
GaN FET |
|
| 5 | GAN080-650EBE |
nexperia |
GaN FET |
|