PD - 91456E IRG4BC40U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C UltraFast Speed IGBT VCES = 600V G E .
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry standard TO-220AB package
C
UltraFast Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.72V
@VGE = 15V, IC = 20A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | G4BC40F |
International Rectifier |
IRG4BC40F | |
2 | G4BC40S |
International Rectifier |
IRG4BC40S | |
3 | G4BC20F |
International Rectifier |
IRG4BC20F | |
4 | G4BC20FD |
International Rectifier |
IRG4BC20FD | |
5 | G4BC20KD |
International Rectifier |
IRG4BC20KD | |
6 | G4BC20U |
International Rectifier |
IRG4BC20U | |
7 | G4BC20UD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | G4BC30FD |
International Rectifier |
IRG4BC30FD | |
9 | G4BC30KD |
International Rectifier |
IRG4BC30KD | |
10 | G4BC30UD |
International Rectifier |
IRG4BC30UD | |
11 | G4BC30W |
International Rectifier |
IRG4BC30W | |
12 | G4B |
Vishay |
Standard Sinterglass Diode |