PD 91453B IRG4BC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, .
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package
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UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
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Benefits
• Generation -4 IGBT's offer highest efficiencies available
• IGBTs optimized for specific application conditions
• HEXFR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | G4BC30FD |
International Rectifier |
IRG4BC30FD | |
2 | G4BC30KD |
International Rectifier |
IRG4BC30KD | |
3 | G4BC30W |
International Rectifier |
IRG4BC30W | |
4 | G4BC20F |
International Rectifier |
IRG4BC20F | |
5 | G4BC20FD |
International Rectifier |
IRG4BC20FD | |
6 | G4BC20KD |
International Rectifier |
IRG4BC20KD | |
7 | G4BC20U |
International Rectifier |
IRG4BC20U | |
8 | G4BC20UD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | G4BC40F |
International Rectifier |
IRG4BC40F | |
10 | G4BC40S |
International Rectifier |
IRG4BC40S | |
11 | G4BC40U |
International Rectifier |
IRG4BC40U | |
12 | G4B |
Vishay |
Standard Sinterglass Diode |