PD - 91454B IRG4BC40F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on.
• Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry standard TO-220AB package
C
Fast Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.50V
@VGE = 15V, IC = 27A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parame.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | G4BC40S |
International Rectifier |
IRG4BC40S | |
2 | G4BC40U |
International Rectifier |
IRG4BC40U | |
3 | G4BC20F |
International Rectifier |
IRG4BC20F | |
4 | G4BC20FD |
International Rectifier |
IRG4BC20FD | |
5 | G4BC20KD |
International Rectifier |
IRG4BC20KD | |
6 | G4BC20U |
International Rectifier |
IRG4BC20U | |
7 | G4BC20UD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | G4BC30FD |
International Rectifier |
IRG4BC30FD | |
9 | G4BC30KD |
International Rectifier |
IRG4BC30KD | |
10 | G4BC30UD |
International Rectifier |
IRG4BC30UD | |
11 | G4BC30W |
International Rectifier |
IRG4BC30W | |
12 | G4B |
Vishay |
Standard Sinterglass Diode |