G4BC40S - International Rectifier

G4BC40S IRG4BC40S

www.DataSheet4U.com PD - 91455B IRG4BC40S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V .

Features

• Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.32V @VGE = 15V, IC = 31A n-channel Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC.