HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop .
of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49347.
Features
• 100kHz Operation At 390V, 40A
• 200kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | G40N60 |
Fairchild Semiconductor |
Ultrafast IGBT | |
2 | G40N60C3 |
Fairchild Semiconductor |
HGTG40N60C3 | |
3 | G40N60UFD |
Fairchild Semiconductor |
FGA40N60UFD | |
4 | G40N03A |
GFD |
N-Channel Enhancement Mode Power MOSFET | |
5 | G40N120CE |
Taiwan Semiconductor |
TSG40N120CE | |
6 | G40N150D |
Fairchild |
FGL40N150D | |
7 | G40 |
MACOM |
Voltage-Controlled Attenuator Module | |
8 | G4000EC450 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor | |
9 | G4000EF250 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor | |
10 | G400SD |
GTM |
SCHOTTKY BARRIER DIODE | |
11 | G4010E |
Mechatronics |
DC AXIAL FANS | |
12 | G4010H |
Mechatronics |
DC AXIAL FANS |