Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Features • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A High input impedance Built-in fast recovery diode Applications Home appliances, induction heaters, IH JAR.
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• High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A High input impedance Built-in fast recovery diode
Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.
C
G
TO-264
G C E
TC = 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Tem.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | G40N120CE |
Taiwan Semiconductor |
TSG40N120CE | |
2 | G40N03A |
GFD |
N-Channel Enhancement Mode Power MOSFET | |
3 | G40N60 |
Fairchild Semiconductor |
Ultrafast IGBT | |
4 | G40N60A4 |
Fairchild Semiconductor |
HGTG40N60A4 | |
5 | G40N60C3 |
Fairchild Semiconductor |
HGTG40N60C3 | |
6 | G40N60UFD |
Fairchild Semiconductor |
FGA40N60UFD | |
7 | G40 |
MACOM |
Voltage-Controlled Attenuator Module | |
8 | G4000EC450 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor | |
9 | G4000EF250 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor | |
10 | G400SD |
GTM |
SCHOTTKY BARRIER DIODE | |
11 | G4010E |
Mechatronics |
DC AXIAL FANS | |
12 | G4010H |
Mechatronics |
DC AXIAL FANS |