G40N03A - GFD

G40N03A N-Channel Enhancement Mode Power MOSFET

The G40N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =40A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability a.

Features

● VDS =30V,ID =40A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Application
● SMPS and general purpose applications
● Hard switched and high frequency circuits
● Uninterruptible power supply G40N03A Schematic diagram G40N03A Marking and pin Assignment 100% UIS TESTED! DFN 3x3 EP top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) .