Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A • High input impeda.
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 42ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
GC E
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VCES VGES
IC
ICM (1) IF IFM PD
TJ Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current Collector Current Pulsed Collector Current
@ TC = 25°C @ TC = 100°C
Diode Continuous Forward Current Diode Maximum Forward Current
@ TC = 100°C
Maximu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | G40N60A4 |
Fairchild Semiconductor |
HGTG40N60A4 | |
2 | G40N60C3 |
Fairchild Semiconductor |
HGTG40N60C3 | |
3 | G40N60UFD |
Fairchild Semiconductor |
FGA40N60UFD | |
4 | G40N03A |
GFD |
N-Channel Enhancement Mode Power MOSFET | |
5 | G40N120CE |
Taiwan Semiconductor |
TSG40N120CE | |
6 | G40N150D |
Fairchild |
FGL40N150D | |
7 | G40 |
MACOM |
Voltage-Controlled Attenuator Module | |
8 | G4000EC450 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor | |
9 | G4000EF250 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor | |
10 | G400SD |
GTM |
SCHOTTKY BARRIER DIODE | |
11 | G4010E |
Mechatronics |
DC AXIAL FANS | |
12 | G4010H |
Mechatronics |
DC AXIAL FANS |