P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER MOSFET FX50KMJ-03 HIGH-SPEED SWITCHING USE FX50KMJ-03 OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 E 0.
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V
Conditions
Ratings
–30 ±20
–50
–200
–50
–50
–200 30
–55 ~ +150
–55 ~ +150 2000 2.0
4.5 ± 0.2
Unit V V A A A A A W °C °C V g Jan.1999
Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight
AC for 1minute, Terminal to case Typical value
P
. . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som
IM REL
RY A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FX50KMJ-06 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
2 | FX50KMJ-2 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
3 | FX501 |
Sanyo Semicon Device |
High-Current Switching Applications | |
4 | FX502 |
Sanyo Semicon Device |
High-Current Switching Applications | |
5 | FX503 |
Sanyo Semicon Device |
High-Current Switching Applications | |
6 | FX504 |
Sanyo Semicon Device |
High-Current Switching Applications | |
7 | FX505 |
Sanyo Semicon Device |
High-Current Switching Applications | |
8 | FX506 |
Sanyo Semicon Device |
High-Current Switching Applications | |
9 | FX507 |
Sanyo Semicon Device |
High-Current Switching Applications | |
10 | FX508 |
Sanyo Semicon Device |
High-Current Switching Applications | |
11 | FX509 |
Sanyo Semicon Device |
High-Current Switching Applications | |
12 | FX50SMJ-03 |
Mitsubishi Electric Semiconductor |
Pch POWER MOSFET |