FX50KMJ-06 - Mitsubishi Electric Semiconductor

FX50KMJ-06 HIGH-SPEED SWITCHING USE

P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER MOSFET FX50KMJ-06 HIGH-SPEED SWITCHING USE FX50KMJ-06 OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 E 0.

Features

Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V Conditions Ratings
  –60 ±20
  –50
  –200
  –50
  –50
  –200 35
  –55 ~ +150
  –55 ~ +150 2000 2.0 4.5 ± 0.2 Unit V V A A A A A W °C °C V g Jan.1999 Drain current (Pulsed) Avalanche drain current (Pulsed) L = 50µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A .