FX50KMJ-03 |
Part Number | FX50KMJ-03 |
Manufacturer | Mitsubishi Electric Semiconductor |
Description | P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER MOSFET FX50KMJ-03 HIGH-SPEED SWITCHING USE FX50KM... |
Features |
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V
Conditions
Ratings –30 ±20 –50 –200 –50 –50 –200 30 –55 ~ +150 –55 ~ +150 2000 2.0 4.5 ± 0.2 Unit V V A A A A A W °C °C V g Jan.1999 Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A... |
Document |
FX50KMJ-03 Data Sheet
PDF 50.68KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FX50KMJ-06 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
2 | FX50KMJ-2 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
3 | FX501 |
Sanyo Semicon Device |
High-Current Switching Applications | |
4 | FX502 |
Sanyo Semicon Device |
High-Current Switching Applications | |
5 | FX503 |
Sanyo Semicon Device |
High-Current Switching Applications |