Ordering number:EN4879 FX505 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features · Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX505 houses two chips, each being equivalent to the 2SB1203, in one package. · Matched pair characteristics. Package Dimensions unit:m.
· Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting.
· The FX505 houses two chips, each being equivalent to the 2SB1203, in one package.
· Matched pair characteristics.
Package Dimensions
unit:mm 2118
[FX505]
1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 SANYO:XP6 (Bottom view)
Switching Time Test CIrcuit
Electrical Connection
1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 (Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitte.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FX501 |
Sanyo Semicon Device |
High-Current Switching Applications | |
2 | FX502 |
Sanyo Semicon Device |
High-Current Switching Applications | |
3 | FX503 |
Sanyo Semicon Device |
High-Current Switching Applications | |
4 | FX504 |
Sanyo Semicon Device |
High-Current Switching Applications | |
5 | FX506 |
Sanyo Semicon Device |
High-Current Switching Applications | |
6 | FX507 |
Sanyo Semicon Device |
High-Current Switching Applications | |
7 | FX508 |
Sanyo Semicon Device |
High-Current Switching Applications | |
8 | FX509 |
Sanyo Semicon Device |
High-Current Switching Applications | |
9 | FX50KMJ-03 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
10 | FX50KMJ-06 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
11 | FX50KMJ-2 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
12 | FX50SMJ-03 |
Mitsubishi Electric Semiconductor |
Pch POWER MOSFET |