FS22SM-9 - Mitsubishi Electric Semiconductor

FS22SM-9 Nch POWER MOSFET

MITSUBISHI Nch POWER MOSFET FS50KMJ-03 HIGH-SPEED SWITCHING USE FS50KMJ-03 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 f 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 1 2 3 2.6 ± 0.2 w ¡4V DRIVE ¡VDSS .

Features

ent Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 30µH VGS = 0V VDS = 0V Conditions Ratings 30 ±20 50 200 50 50 200 25
  –55 ~ +150 Unit V V A A A A A W °C °C V g Feb.1999 AC for 1minute, Terminal to case Typical value
  –55 ~ +150 2000 2.0 MITSUBISHI Nch POWER MOSFET FS50KMJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch.