TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS225R12KE4 EconoPACK™+B-SerieModulmitTrench/FeldstoppIGBT4undoptimierterEmitterControlledDiode EconoPACK™+B-seriesmodulewithtrench/fieldstopIGBT4andoptimizedEmitterControlleddiode VorläufigeDaten IGBT,Wechselrichter/IGBT,Inverter PreliminaryData Höchstz.
-emittersaturationvoltage IC = 225 A, VGE = 15 V IC = 225 A, VGE = 15 V IC = 225 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 7,80 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FS225R12KE3 |
Infineon |
IGBT-Module | |
2 | FS225R12KE3 |
eupec |
IGBT-Module | |
3 | FS225R12OE4 |
Infineon |
IGBT | |
4 | FS225R12OE4P |
Infineon |
IGBT | |
5 | FS225R17KE3 |
Infineon |
IGBT | |
6 | FS225R17KE4 |
Infineon |
IGBT | |
7 | FS225R17OE4 |
Infineon |
IGBT | |
8 | FS220 |
Feeling Technology |
2 Phase High Voltage DC Motor Driver | |
9 | FS22SM-10 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
10 | FS22SM-12A |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
11 | FS22SM-9 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
12 | FS200 |
Feeling Technology |
2-PHASE DC MOTOR DRIVER |