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TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS225R17KE3 EconoPACK™+ModulmitTrench/FeldstopIGBT³undEmitterControlled3Diode EconoPACK™+modulewithtrench/fieldstopIGBT³andEmitterControlled3diode IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues VorläufigeDaten PreliminaryData Kol.
= 15 V IC = 225 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 9,00 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FS225R17KE4 |
Infineon |
IGBT |
|
| 2 | FS225R17OE4 |
Infineon |
IGBT |
|
| 3 | FS225R12KE3 |
Infineon |
IGBT-Module |
|
| 4 | FS225R12KE3 |
eupec |
IGBT-Module |
|
| 5 | FS225R12KE4 |
Infineon |
IGBT |
|
| 6 | FS225R12OE4 |
Infineon |
IGBT |
|
| 7 | FS225R12OE4P |
Infineon |
IGBT |
|
| 8 | FS220 |
Feeling Technology |
2 Phase High Voltage DC Motor Driver |
|
| 9 | FS22SM-10 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET |
|
| 10 | FS22SM-12A |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET |
|
| 11 | FS22SM-9 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET |
|
| 12 | FS200 |
Feeling Technology |
2-PHASE DC MOTOR DRIVER |
|