MITSUBISHI Nch POWER MOSFET FS50ASJ-03 HIGH-SPEED SWITCHING USE FS50ASJ-03 OUTLINE DRAWING 6.5 5.0 ± 0.2 Dimensions in mm r 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0MAX. 2.3MIN. 10MAX. 1.0 A 0.5 ± 0.2 0.8 0.9MAX. 2.3 2.3 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡4V DRIVE ¡VDSS ...
rage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 30 ± 20 50 200 50 50 200 35
–55 ~ +150
–55 ~ +150 0.26
Unit V V A A A A A W °C °C g
Feb.1999
L = 30µH
MITSUBISHI Nch POWER MOSFET
FS50ASJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FS22SM-12A |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
2 | FS22SM-9 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
3 | FS220 |
Feeling Technology |
2 Phase High Voltage DC Motor Driver | |
4 | FS225R12KE3 |
Infineon |
IGBT-Module | |
5 | FS225R12KE3 |
eupec |
IGBT-Module | |
6 | FS225R12KE4 |
Infineon |
IGBT | |
7 | FS225R12OE4 |
Infineon |
IGBT | |
8 | FS225R12OE4P |
Infineon |
IGBT | |
9 | FS225R17KE3 |
Infineon |
IGBT | |
10 | FS225R17KE4 |
Infineon |
IGBT | |
11 | FS225R17OE4 |
Infineon |
IGBT | |
12 | FS200 |
Feeling Technology |
2-PHASE DC MOTOR DRIVER |