These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well .
• 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 12 pF)
• 100% Avalanche Tested
D
GDS
G
TO-220F
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQPF8N60 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
2 | FQPF8N60 |
AOKE |
600V N-Channel MOSFET | |
3 | FQPF8N60 |
OuCan |
8A N-Channel MOSFET | |
4 | FQPF8N60CF |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
5 | FQPF8N50 |
OuCan |
9A N-Channel MOSFET | |
6 | FQPF8N80 |
Oucan Semi |
7.4A N-Channel MOSFET | |
7 | FQPF8N80C |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
8 | FQPF8N90C |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
9 | FQPF8N90C |
ON Semiconductor |
N-Channel MOSFET | |
10 | FQPF85N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
11 | FQPF8P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET | |
12 | FQPF10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |