This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on h.
■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V
■ Low gate charge
■ Low Crss (typical 23pF)
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability
■ ROHS product
General Description
This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
Symbol
VDSS .
Product Summary The FQP8N60 & FQPF8N60 have been fabricated using an advanced high voltage MOSFET process that is desi.
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification FQPF8N60 ·FEATURES ·Drain Current –ID.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQPF8N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
2 | FQPF8N60CF |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
3 | FQPF8N50 |
OuCan |
9A N-Channel MOSFET | |
4 | FQPF8N80 |
Oucan Semi |
7.4A N-Channel MOSFET | |
5 | FQPF8N80C |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
6 | FQPF8N90C |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
7 | FQPF8N90C |
ON Semiconductor |
N-Channel MOSFET | |
8 | FQPF85N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
9 | FQPF8P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET | |
10 | FQPF10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
11 | FQPF10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
12 | FQPF10N20C |
INCHANGE |
N-Channel MOSFET |