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Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
• 6.26 A, 600 V, RDS(on) = 1.5 Ω (Max.) @ VGS = 10 V, ID = 3.13 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 12 pF)
• 100% Avalanche Tested
D
GDS
TO-220.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQPF8N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 2 | FQPF8N60 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 3 | FQPF8N60 |
AOKE |
600V N-Channel MOSFET |
|
| 4 | FQPF8N60 |
OuCan |
8A N-Channel MOSFET |
|
| 5 | FQPF8N50 |
OuCan |
9A N-Channel MOSFET |
|
| 6 | FQPF8N80 |
Oucan Semi |
7.4A N-Channel MOSFET |
|
| 7 | FQPF8N80C |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 8 | FQPF8N90C |
Fairchild Semiconductor |
900V N-Channel MOSFET |
|
| 9 | FQPF8N90C |
ON Semiconductor |
N-Channel MOSFET |
|
| 10 | FQPF85N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET |
|
| 11 | FQPF8P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET |
|
| 12 | FQPF10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|