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FQPF8N60C |
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| Part Number | FQPF8N60C |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 12 pF) • 100% Avalanche Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation ... |
| Document |
 FQPF8N60C Data Sheet
PDF 889.97KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQPF8N60 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 2 | FQPF8N60 |
AOKE |
600V N-Channel MOSFET |
|
| 3 | FQPF8N60 |
OuCan |
8A N-Channel MOSFET |
|
| 4 | FQPF8N60CF |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 5 | FQPF8N50 |
OuCan |
9A N-Channel MOSFET |
|