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FQPF8N60 |
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| Part Number | FQPF8N60 |
| Manufacturer | AOKE |
| Description | This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche ch... |
| Features |
■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 23pF) ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability ■ ROHS product General Description This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Absolute Maximum Ratings Symbol VDSS ... |
| Document |
 FQPF8N60 Data Sheet
PDF 560.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQPF8N60 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 2 | FQPF8N60 |
OuCan |
8A N-Channel MOSFET |
|
| 3 | FQPF8N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 4 | FQPF8N60CF |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 5 | FQPF8N50 |
OuCan |
9A N-Channel MOSFET |
|