These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• -4.8A, -200V, RDS(on) = 1.4Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested
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TO-220
FQP Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP5P20 -200 -4.8 -3.04 -19.2 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQP5P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET | |
2 | FQP50N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
3 | FQP50N06 |
Thinki Semiconductor |
N-Channel Power MOSFET | |
4 | FQP50N06 |
INCHANGE |
N-Channel MOSFET | |
5 | FQP50N06L |
ON Semiconductor |
N-Channel MOSFET | |
6 | FQP50N06L |
Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET | |
7 | FQP50N06L |
INCHANGE |
N-Channel MOSFET | |
8 | FQP55N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
9 | FQP55N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
10 | FQP58N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
11 | FQP5N15 |
Fairchild Semiconductor |
N-CHANNEL MOSFET | |
12 | FQP5N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |