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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power.
• 55 A, 100 V, RDS(on) = 26 mΩ (Max.) @ VGS = 10 V, ID = 27.5 A
• Low Gate Charge (Typ. 75 nC)
• Low Crss (Typ. 130 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
GDS TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQP55N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET |
|
| 2 | FQP50N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET |
|
| 3 | FQP50N06 |
Thinki Semiconductor |
N-Channel Power MOSFET |
|
| 4 | FQP50N06 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | FQP50N06L |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | FQP50N06L |
Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET |
|
| 7 | FQP50N06L |
INCHANGE |
N-Channel MOSFET |
|
| 8 | FQP58N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET |
|
| 9 | FQP5N15 |
Fairchild Semiconductor |
N-CHANNEL MOSFET |
|
| 10 | FQP5N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 11 | FQP5N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 12 | FQP5N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|