FQP55N06 - Fairchild Semiconductor

FQP55N06 60V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.

Features

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• 55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP55N06 60 55 38.9 220 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A.