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FQP50N06 - Thinki Semiconductor

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FQP50N06 N-Channel Power MOSFET

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M pkg is well suited for adaptor power unit and small power inverter application. B.

Features


• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating 1. Gate { { 2. Drain
● ◀▲

● { 3. Source General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M pkg is well suited for adaptor power uni.

The same part from a different manufacturer

Datasheet FQP50N06 - Fairchild Semiconductor FQP50N06

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar strip.

Datasheet FQP50N06 - INCHANGE FQP50N06

·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ.

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