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FQP55N10 |
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| Part Number | FQP55N10 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
| Features |
• 55 A, 100 V, RDS(on) = 26 mΩ (Max.) @ VGS = 10 V, ID = 27.5 A • Low Gate Charge (Typ. 75 nC) • Low Crss (Typ. 130 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous ... |
| Document |
 FQP55N10 Data Sheet
PDF 668.01KB |
| Distributor | Stock | Price | Buy |
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