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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power.
• 4.0 A, 900 V, RDS(on) = 4.2 Ω (Max.) @ VGS = 10 V, ID = 2.0 A
• Low Gate Charge (Typ. 17 nC)
• Low Crss (Typ. 5.6 pF)
• 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Parameter Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQP4N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET |
|
| 2 | FQP4N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 3 | FQP4N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 4 | FQP4N20L |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FQP4N25 |
Fairchild Semiconductor |
250V Channel MOSFET |
|
| 6 | FQP4N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 7 | FQP4N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 8 | FQP4N60 |
Oucan Semi |
4A N-Channel MOSFET |
|
| 9 | FQP4N60C |
HAOHAI |
N-Channel MOSFET |
|
| 10 | FQP4N65 |
Oucan Semi |
4A N-Channel MOSFET |
|
| 11 | FQP4N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 12 | FQP44N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET |
|