These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• 3.9A, 800V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 8.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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TO-220
FQP Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP4N80 800 3.9 2.47 15.6 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQP4N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
2 | FQP4N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
3 | FQP4N20L |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FQP4N25 |
Fairchild Semiconductor |
250V Channel MOSFET | |
5 | FQP4N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
6 | FQP4N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
7 | FQP4N60 |
Oucan Semi |
4A N-Channel MOSFET | |
8 | FQP4N60C |
HAOHAI |
N-Channel MOSFET | |
9 | FQP4N65 |
Oucan Semi |
4A N-Channel MOSFET | |
10 | FQP4N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
11 | FQP4N90C |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
12 | FQP44N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET |