FQP4N60 - Oucan Semi

FQP4N60 4A N-Channel MOSFET

Product Summary The FQP4N60 & FQPF4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline pow.

Features

5°C Power Dissipation B Derate above 25oC PD 104 0.83 35 0.28 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP4N60 65 0.5 FQPF4N60 65 -- Maximum Junction-to-Case RθJC
* Drain current limited by maximum junction temperature. 1.2 3.6 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Param.