FQP4N20L - Fairchild Semiconductor

FQP4N20L N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suit.

Features

• 3.8 A, 200 V, RDS(on) = 1.35 Ω (Max.) @ VGS = 10 V, ID = 1.9 A
• Low Gate Charge (Typ. 4.0 nC)
• Low Crss (Typ. 6.0 pF)
• 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) PD Power Dissipation (TC = 25°C) .