FQP13N06 |
Part Number | FQP13N06 |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • • 13A, 60V, RDS(on) = 0.135Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP13N06 60 13 9.2 52 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A... |
Document |
FQP13N06 Data Sheet
PDF 664.65KB |
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