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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
• 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supp.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQP10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 2 | FQP10N60 |
Oucan Semi |
N-Channel MOSFET |
|
| 3 | FQP10N65 |
Oucan Semi |
10A N-Channel MOSFET |
|
| 4 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 6 | FQP10N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 7 | FQP10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 8 | FQP10N20C |
INCHANGE |
N-Channel MOSFET |
|
| 9 | FQP10N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 10 | FQP10N50CF |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 11 | FQP11N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 12 | FQP11N40C |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|