Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are we.
• 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A
• Low Gate Charge (Typ. 44 nC)
• Low Crss (Typ. 18 pF)
• 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Dr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQP10N60 |
Oucan Semi |
N-Channel MOSFET |
|
| 2 | FQP10N60CF |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FQP10N65 |
Oucan Semi |
10A N-Channel MOSFET |
|
| 4 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 6 | FQP10N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 7 | FQP10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 8 | FQP10N20C |
INCHANGE |
N-Channel MOSFET |
|
| 9 | FQP10N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 10 | FQP10N50CF |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 11 | FQP11N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 12 | FQP11N40C |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|