Product Summary The FQP10N65 & FQPF10N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline p.
n B Derate above 25oC
PD
250 50 2 0.4
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
FQP10N65 65 0.5
FQPF10N65 65 --
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.5
2.5
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C/W °C/W °C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQP10N60 |
Oucan Semi |
N-Channel MOSFET | |
2 | FQP10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
3 | FQP10N60CF |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
5 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
6 | FQP10N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
7 | FQP10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
8 | FQP10N20C |
INCHANGE |
N-Channel MOSFET | |
9 | FQP10N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
10 | FQP10N50CF |
Fairchild Semiconductor |
N-Channel MOSFET | |
11 | FQP11N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
12 | FQP11N40C |
Fairchild Semiconductor |
400V N-Channel MOSFET |