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FQP10N60CF |
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| Part Number | FQP10N60CF |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supp... |
| Document |
 FQP10N60CF Data Sheet
PDF 960.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQP10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 2 | FQP10N60 |
Oucan Semi |
N-Channel MOSFET |
|
| 3 | FQP10N65 |
Oucan Semi |
10A N-Channel MOSFET |
|
| 4 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|