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FQD50N06 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.012 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 50 45 FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: D TO-252 GD S G S N-Channel MOSFET www.VBsemi.tw ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Sym.
• 175 °C Junction Temperature
• TrenchFET® Power MOSFET
• Material categorization:
D TO-252
GD S
G
S N-Channel MOSFET
www.VBsemi.tw
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 100 °C
ID
50 45a
Pulsed Drain Current
IDM
100
A
Continuous Source Current (Diode Conduction)
IS
50a
Avalanche Current
IAS
50
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAS
125
mJ
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
PD
136 3b, 8.3b, .
FQD50N06 - INCHANGE
isc N-Channel MOSFET Transistor FQD50N06 ·FEATURES ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Res.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQD50P06 |
INCHANGE |
P-Channel MOSFET |
|
| 2 | FQD5N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET |
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| 3 | FQD5N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 4 | FQD5N20L |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | FQD5N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
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| 6 | FQD5N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
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| 7 | FQD5N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 8 | FQD5N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 9 | FQD5N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 10 | FQD5N60C |
ON Semiconductor |
N-Channel MOSFET |
|
| 11 | FQD5P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET |
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| 12 | FQD5P20 |
Fairchild Semiconductor |
200V P-Channel MOSFET |
|