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FQD50N06 |
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| Part Number | FQD50N06 |
| Manufacturer | VBsemi |
| Description | FQD50N06 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.012 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 50 45 FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFE... |
| Features |
• 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: D TO-252 GD S G S N-Channel MOSFET www.VBsemi.tw ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 50 45a Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction) IS 50a Avalanche Current IAS 50 Single Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH EAS 125 mJ Maximum Power Dissipation TC = 25 °C TA = 25 °C PD 136 3b, 8.3b, ... |
| Document |
 FQD50N06 Data Sheet
PDF 861.99KB |
| Distributor | Stock | Price | Buy |
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