Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
FQD5N60C / FQU5N60C Features • 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A • Low Gate Charge (Typ. 15 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested • RoHS compliant This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology .
• 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A
• Low Gate Charge (Typ. 15 nC)
• Low Crss (Typ. 6.5 pF)
• 100% Avalanche Tested
• RoHS compliant
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
.
FQD5N60C - ON Semiconductor
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS tec.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQD5N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET |
|
| 2 | FQD5N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 3 | FQD5N20L |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 4 | FQD5N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|
| 5 | FQD5N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 6 | FQD5N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 7 | FQD5N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 8 | FQD50N06 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | FQD50N06 |
VBsemi |
N-Channel MOSFET |
|
| 10 | FQD50P06 |
INCHANGE |
P-Channel MOSFET |
|
| 11 | FQD5P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET |
|
| 12 | FQD5P20 |
Fairchild Semiconductor |
200V P-Channel MOSFET |
|