FQD50P06 - INCHANGE

FQD50P06 P-Channel MOSFET

·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -50 A IDM Drain Current-Single Pluse -80 A PD Total Dissipation @TC=25℃ 113 W TJ Max. Operating Junction Temperature -55~.

Features

·Drain Current
  –ID= -50A@ TC=25℃
·Drain Source Voltage- : VDSS= -60V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= -10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -50 A IDM Drain Current-Single Pluse -80 A PD Total Dissipation @TC=25℃ 113 W TJ Max. Operating Junc.