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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode powe.
• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A
• Low Gate Charge (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100% Avalanche Tested
• RoHS Compliant
N-Channel QFET® MOSFET
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correctio.
FQD2N60C - ON Semiconductor
MOSFET – N-Channel, QFET) 600 V, 1.9 A, 4,7 W FQD2N60C / FQU2N60C This N−Channel enhancement mode power MOSFET is produ.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQD2N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 2 | FQD2N100 |
Fairchild Semiconductor |
1000V N-Channel MOSFET |
|
| 3 | FQD2N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|
| 4 | FQD2N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 5 | FQD2N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 6 | FQD2N50B |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 7 | FQD2N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 8 | FQD2N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET |
|
| 9 | FQD20N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET |
|
| 10 | FQD20N06L |
Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET |
|
| 11 | FQD20N06LE |
Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET |
|
| 12 | FQD20N10 |
OuCan |
N-Channel MOSFET |
|