FQD2N60C |
Part Number | FQD2N60C |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | MOSFET – N-Channel, QFET) 600 V, 1.9 A, 4,7 W FQD2N60C / FQU2N60C This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced ... |
Features |
• 1.9 A, 600 V, RDS(on) = 4.7 W (Max.) @ VGS = 10 V, ID = 0.95 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche Tested • These Devices are Halid Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Rating Value Unit VDSS Drain−Source Voltage 600 V ID Drain Current − Continuous (TC = 25°C) 1.9 A − Continuous (TC = 100°C) 1.14 IDM Drain Current − Pulsed (Note 1) 7.6 VGSS Gate−Source Voltage ±30 EAS Single Pulsed Avalanche Energy (Note 2) 120 IAR Avalanche Current (Note 1) 1.9 EAR Repetitive Avalanche Energy (Note... |
Document |
FQD2N60C Data Sheet
PDF 449.88KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQD2N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
2 | FQD2N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
3 | FQD2N100 |
Fairchild Semiconductor |
1000V N-Channel MOSFET | |
4 | FQD2N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
5 | FQD2N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |