FQD2N60C |
Part Number | FQD2N60C |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to... |
Features |
• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche Tested • RoHS Compliant N-Channel QFET® MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correctio... |
Document |
FQD2N60C Data Sheet
PDF 0.97MB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQD2N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
2 | FQD2N60C |
ON Semiconductor |
N-Channel MOSFET | |
3 | FQD2N100 |
Fairchild Semiconductor |
1000V N-Channel MOSFET | |
4 | FQD2N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
5 | FQD2N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |