This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power.
• 1.6 A, 1000 V, RDS(on) = 9 Ω (Max.)@ VGS = 10 V, ID = 0.8 A
• Low Gate Charge ( Typ. 12 nC)
• Low Crss ( Typ. 5 pF)
• 100% Avalanche Tested
• RoHS Compliant
D D
G S
D-PAK
GDS
I-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQD2N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
2 | FQD2N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
3 | FQD2N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
4 | FQD2N50B |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
5 | FQD2N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
6 | FQD2N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
7 | FQD2N60C |
ON Semiconductor |
N-Channel MOSFET | |
8 | FQD2N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
9 | FQD2N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
10 | FQD20N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
11 | FQD20N06L |
Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET | |
12 | FQD20N06LE |
Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET |