AND APPLICATIONS The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.
♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 19 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 45 dBm Output IP3 at 1.8 GHz ♦ 50% Power-Added Efficiency
FP1510SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
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DESCRIPTION AND APPLICATIONS The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. Th.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FP150F |
VMI |
(FP125F - FP175F) Rectifier Stacks | |
2 | FP150R07N3E4 |
Infineon |
IGBT | |
3 | FP150R07N3E4_B11 |
Infineon |
IGBT | |
4 | FP150R12KT4 |
Infineon |
IGBT | |
5 | FP150R12KT4P |
Infineon |
IGBT | |
6 | FP150R12KT4P_B11 |
Infineon |
IGBT | |
7 | FP150R12KT4_B11 |
Infineon |
IGBT | |
8 | FP150S |
Voltage Multipliers |
Rectifier Stacks | |
9 | FP1527 |
Silvan |
OTP Encoder | |
10 | FP15F60AA |
JILIN SINO |
FAST RECOVERY DIODE | |
11 | FP15R06KL4 |
ETC |
Elektrische Eigenschaften / Electrical properties | |
12 | FP15R06W1E3 |
Infineon |
IGBT |