Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R06KL4 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Durchlaßstrom Grenzeffektivwert pro Chip RMS forw.
r dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral 2 I t - value tP = 1 ms VR = 0V, tp = 10ms, Tvj = 125°C IF IFRM 2 It Tvj =25°C TC =65°C TC = 25 °C tP = 1 ms, TC = 25°C T C =65°C VCES IC,nom. IC ICRM Ptot VGES 600 15 19 30 60 +/- 20V V A A A W V 15 30 25 A A A2s Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Period.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FP15R06W1E3 |
Infineon |
IGBT | |
2 | FP15R06W1E3_B11 |
Infineon |
IGBT | |
3 | FP15R12KE3 |
eupec GmbH |
IGBT-Module | |
4 | FP15R12KE3G |
eupec GmbH |
IGBT-Module | |
5 | FP15R12KE3G |
Infineon |
IGBT | |
6 | FP15R12KS4C |
eupec |
IGBT | |
7 | FP15R12KT3 |
eupec GmbH |
IGBT-Module | |
8 | FP15R12KT3 |
Infineon |
IGBT | |
9 | FP15R12W1T4 |
Infineon Technologies |
IGBT | |
10 | FP15R12W1T4P |
Infineon |
IGBT | |
11 | FP15R12W1T4P_B11 |
Infineon |
IGBT | |
12 | FP15R12W1T4_B11 |
Infineon |
IGBT |