12,500 V - 20,000 V Rectifier Stacks 2.2 A Forward Current 3000 ns Recovery Time FP125S FP150S FP175S FP200S ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Current (in oil) (Io) 55°C Volts FP125S FP150S FP175S FP200S Amps 100°C Amps Reverse Current @ Vrwm (Ir) 25°C µA 100°C µA 25°C Volts Amps For.
rwise noted.
• Data subject to change without notice.
VOLTAGE MULTIPLIERS INC. 8711 W. Roosevelt Ave. Visalia, CA 93291
TEL 559-651-1402 FAX 559-651-0740 www.voltagemultipliers.com
197
w w w . D a t a S h e e t . i n
FP125S FP150S FP175S FP200S
2.5
MAXIMUM FORWARD CURRENT VS. TEMPERATURE
35 30
TYPICAL FORWARD VOLTAGE VS. FORWARD CURRENT AT 25°C
2 Maximum Current (I) Forward Voltage (V) 25 20 15 10 5 0 25 50 75 100 125 Temperature (°C) Ambient Temperature (C) 150 0 0
FP200S FP175S FP150S FP125S
1.5
1
0.5
2
4
6 8 10 12 Forward Current (A)
14
16
18
1000
REVERSE CURRENT VS. TEM.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FP150F |
VMI |
(FP125F - FP175F) Rectifier Stacks | |
2 | FP150R07N3E4 |
Infineon |
IGBT | |
3 | FP150R07N3E4_B11 |
Infineon |
IGBT | |
4 | FP150R12KT4 |
Infineon |
IGBT | |
5 | FP150R12KT4P |
Infineon |
IGBT | |
6 | FP150R12KT4P_B11 |
Infineon |
IGBT | |
7 | FP150R12KT4_B11 |
Infineon |
IGBT | |
8 | FP1510SOT89 |
Filtronic Compound Semiconductors |
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT | |
9 | FP1527 |
Silvan |
OTP Encoder | |
10 | FP15F60AA |
JILIN SINO |
FAST RECOVERY DIODE | |
11 | FP15R06KL4 |
ETC |
Elektrische Eigenschaften / Electrical properties | |
12 | FP15R06W1E3 |
Infineon |
IGBT |