FNK75N08BD - FNK

FNK75N08BD N-Channel Power MOSFET

TheFNK75N08BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK75N08BD General Features ● VDS =80V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.7mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stabilit.

Features

● VDS =80V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.7mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply To-263 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK75N08BD FNK75N08BD TO-263 Reel Size - Tape width - Qua.